Heterojunction Solar Cells (A-Si/C-Si): Investigations on Pecv Deposited Hydrogenated Silicon Alloys for Use as High-Quality Surface Passivation and Emitter/Bsf Thomas Mueller

ISBN: 9783832522919

Published: September 30th 2009

Paperback

280 pages


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Heterojunction Solar Cells (A-Si/C-Si): Investigations on Pecv Deposited Hydrogenated Silicon Alloys for Use as High-Quality Surface Passivation and Emitter/Bsf  by  Thomas Mueller

Heterojunction Solar Cells (A-Si/C-Si): Investigations on Pecv Deposited Hydrogenated Silicon Alloys for Use as High-Quality Surface Passivation and Emitter/Bsf by Thomas Mueller
September 30th 2009 | Paperback | PDF, EPUB, FB2, DjVu, audiobook, mp3, ZIP | 280 pages | ISBN: 9783832522919 | 6.67 Mb

The main focus of the present work is related to the optimization of heterojunction solar cells. The key roles in obtaining high efficient heterojunction solar cells are mainly the plasma enhanced chemical vapor deposition of very low defect layers,MoreThe main focus of the present work is related to the optimization of heterojunction solar cells. The key roles in obtaining high efficient heterojunction solar cells are mainly the plasma enhanced chemical vapor deposition of very low defect layers, and the sufficient surface passivation of all interfaces. In heterojunction solar cells, the a-Si: H/c-Si hetero-interface is of significant importance, since the hetero-interface characteristics directly affect the junction properties and thus solar cell efficiency.

In this work, the deposition and film properties of various hydrogenated amorphous silicon alloys, such as a-SiC: H, a-SiO_x: H, and muc-Si: H (standard a-Si: H is used as reference), are employed. Special attention is paid to (i) the front and back surface passivation of the bulk material by high-quality wide-gap amorphous silicon suboxides (a-SiO_x: H), and (ii) the influence of wide-gap high-quality a-Si- and muc-Si-based alloys for use as emitter and back-surface-



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